| NATIONAL SEMICONDUCTOR CORPORATION | |
| WHN EXHST USE 5961-01-011-4957,DISCONTINUED W/O REPLACEMENT,DISCNT USE 5961-01-011-4957,WHN EXHST USE 5961-01-011-4957,WHN EXHST USE 5961-01-011-4957 | |
| 8541.50.0080 | |
| METAL | |
| 0.210 INCHES MAXIMUM | |
| 0.500 INCHES MINIMUM | |
| 0.230 INCHES MAXIMUM | |
| FIELD EFFECT | |
| TERMINAL | |
| HERMETICALLY SEALED CASE | |
| SILICON | |
| 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE | |
| 10.00 MILLIAMPERES MAXIMUM GATE CURRENT | |
| 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION | |
| 4 UNINSULATED WIRE LEAD |
