| RAYTHEON COMPANY | |
| N/A | |
| 1.200 INCHES MINIMUM AND 1.300 INCHES MAXIMUM | |
| 0.500 INCHES MINIMUM AND 0.600 INCHES MAXIMUM | |
| 0.200 INCHES MAXIMUM | |
| 800.0 MILLIWATTS | |
| M25.0/P85.0 DEG CELSIUS | |
| M65.0/P125.0 DEG CELSIUS | |
| MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND 3-STATE OUTPUT | |
| CERAMIC AND GLASS | |
| DUAL-IN-LINE | |
| N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC | |
| 10 INPUT | |
| SOLDER | |
| 15.0 VOLTS MAXIMUM POWER SOURCE | |
| 2000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 2000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT | |
| ROM | |
| 6.5 GRAMS | |
| 96906-MIL-STD-883 STANDARD | |
| 24 PRINTED CIRCUIT |
